Graphene Nanoribbon Conductance Model in Parabolic Band Structure

Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model

Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene ...

Voltage-dependent conductance of a single graphene nanoribbon.

Graphene nanoribbons could potentially be used to create molecular wires with tailored conductance properties. However, understanding charge transport through a single molecule requires length-dependent conductance measurements and a systematic variation of the electrode potentials relative to the electronic states of the molecule. Here, we show that the conductance properties of a single molec...

Josephson Current For a Graphene Nanoribbon Using a Lattice Model

A tight binding approach based on the Bogoliubov-de Gennes approach has been used to calculate the DC Josephson current for a lattice model for S-GNR-S junctions , for short junctions with respect to superconducting coherence length. We calculate the phase, length, width and chemical potential dependence at the Josephson junction and discuss the similarities and differences with regard to the t...

Computational Model of Edge Effects in Graphene Nanoribbon Transistors

Address correspondence to guoj@ufl .edu ABSTRACT We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon fi eld-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a sign...

Graphene nanoribbon heterojunctions and heterostructures